Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells Menoni, Carmen S. ; Buccafusca, O. ; Marconi, Mario Carlos ; Patel, Dineshchandra ; Rocca, Jorge, J. ; Robinson, G. Y. ; Goodnick, Stephen M.(Stephen Marshall), 1955- "This work is supported by the National Science Foundation through Grant Nos. DMR 9321422, ECS-9502888, EEC-9015128, the Colorado Advanced Technology Institute, Grant No. 0594.75.0738, and by AFOSR contract F49620-93-1-0021." Indirect Γ-L scattering within the well, and real space carrier transfer to the barrier X1c states are shown to significantly affect the carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum wells. When carriers transfer to the indirect states occurs, the carrier dynamics is modified by the slow return of the carriers from the low mobility states to the well. As a result, the absorption recovery time increases by almost an order of magnitude. Carrier transfer to the indirect states also increases the carrier lifetime to values characteristic of indirect recombination. Colorado State University. Libraries 1997 text ; image application/pdf ECEmcm00012.pdf FACFECEN100424ARTI eng c1997 American Institute of Physics
Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells
Menoni, Carmen S. ; Buccafusca, O. ; Marconi, Mario Carlos ; Patel, Dineshchandra ; Rocca, Jorge, J. ; Robinson, G. Y. ; Goodnick, Stephen M.(Stephen Marshall), 1955-
"This work is supported by the National Science Foundation through Grant Nos. DMR 9321422, ECS-9502888, EEC-9015128, the Colorado Advanced Technology Institute, Grant No. 0594.75.0738, and by AFOSR contract F49620-93-1-0021."
Indirect Γ-L scattering within the well, and real space carrier transfer to the barrier X1c states are shown to significantly affect the carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum wells. When carriers transfer to the indirect states occurs, the carrier dynamics is modified by the slow return of the carriers from the low mobility states to the well. As a result, the absorption recovery time increases by almost an order of magnitude. Carrier transfer to the indirect states also increases the carrier lifetime to values characteristic of indirect recombination.
Colorado State University. Libraries
1997
text ; image
application/pdf
ECEmcm00012.pdf
FACFECEN100424ARTI
eng
c1997 American Institute of Physics