Picosecond absorption dynamics of photoexcited InGaP epitaxial films Thiagarajan, P. ; Schmerge, J. F. ; Menoni, Carmen S. ; Marconi, Mario Carlos ; Martinez, Oscar Eduardo ; Rocca, Jorge J. ; Hafich, M. J. ; Lee, H. Y. ; Robinson, G. Y. "This work was supported by the National Science Foundation grant (USA/Argentina) INT 8802563, the Air Force Office of Scientific Research (contract 89-0513), and the Center for Optoelectronic Computing Systems, sponsored by the National Science Foundation/Engineering Research Center grant ECD 9015128 and by the Colorado Advanced Technology Institute, an agency of the State of Colorado. C. S. Menoni acknowledges the support of the National Science Foundation grant ECS 9008899 and the CSU Faculty Research Grant." The absorption recovery of a photoexcited InGaP epitaxial film 0.4 µm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 × l05 cm/s at room temperature. Colorado State University. Libraries 1991 text ; image application/pdf ECEmcm00035.pdf FACFECEN100447ARTI eng c1991 American Institute of Physics
Picosecond absorption dynamics of photoexcited InGaP epitaxial films
Thiagarajan, P. ; Schmerge, J. F. ; Menoni, Carmen S. ; Marconi, Mario Carlos ; Martinez, Oscar Eduardo ; Rocca, Jorge J. ; Hafich, M. J. ; Lee, H. Y. ; Robinson, G. Y.
"This work was supported by the National Science Foundation grant (USA/Argentina) INT 8802563, the Air Force Office of Scientific Research (contract 89-0513), and the Center for Optoelectronic Computing Systems, sponsored by the National Science Foundation/Engineering Research Center grant ECD 9015128 and by the Colorado Advanced Technology Institute, an agency of the State of Colorado. C. S. Menoni acknowledges the support of the National Science Foundation grant ECS 9008899 and the CSU Faculty Research Grant."
The absorption recovery of a photoexcited InGaP epitaxial film 0.4 µm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 × l05 cm/s at room temperature.
Colorado State University. Libraries
1991
text ; image
application/pdf
ECEmcm00035.pdf
FACFECEN100447ARTI
eng
c1991 American Institute of Physics