Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers Crawford, Mary Hagerott ; Schneider, Richard P. ; Choquette, Kent D. ; Lear, Kevin L. "This letter was supported by the US Department of Energy under contract no. DE-AC04-94AL85000." We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50°C from a 15-μm-diameter device. Colorado State University. Libraries 1995 text ; image application/pdf ECEkll00037.pdf FACFECEN100387ARTI eng c1995 IEEE

Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

Crawford, Mary Hagerott ; Schneider, Richard P. ; Choquette, Kent D. ; Lear, Kevin L.

"This letter was supported by the US Department of Energy under contract no. DE-AC04-94AL85000."

We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50°C from a 15-μm-diameter device.

Colorado State University. Libraries

1995

text ; image

application/pdf

ECEkll00037.pdf

FACFECEN100387ARTI

eng

c1995 IEEE