Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes Schneider, Richard P. ; Choquette, Kent D. ; Lott, J. A. ; Lear, Kevin L. ; Figiel, J. J. ; Malloy, K. J. "This work was performed at Sandia National Laboratories under D.O.E. contract No. DE-AC04-94AL85000. J. A. L. acknowledges additional support from the Air Force Institute of Technology, Wright-Patterson AFB, OH." Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45°C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes. Colorado State University. Libraries 1994 text ; image application/pdf ECEkll00035.pdf FACFECEN100385ARTI eng c1994 IEEE
Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes
Schneider, Richard P. ; Choquette, Kent D. ; Lott, J. A. ; Lear, Kevin L. ; Figiel, J. J. ; Malloy, K. J.
"This work was performed at Sandia National Laboratories under D.O.E. contract No. DE-AC04-94AL85000. J. A. L. acknowledges additional support from the Air Force Institute of Technology, Wright-Patterson AFB, OH."
Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45°C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.
Colorado State University. Libraries
1994
text ; image
application/pdf
ECEkll00035.pdf
FACFECEN100385ARTI
eng
c1994 IEEE