Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements Giudice, G. E. ; Kuksenkov, D. V. ; Temkin, H. ; Lear, Kevin L. "Work at Texas Tech is supported by BMDO (monitored by Lou Lome), DARPA, and the J. F. Maddox Foundation." Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 µA, to about 1 ns at a bias close to threshold. For a 6 × 6 µm2 oxide aperture device the threshold carrier density was nth ~ 2 × 1018cm–3. The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D ~ 11 cm2s–1 was obtained. Colorado State University. Libraries 1999 text ; image application/pdf ECEkll00007.pdf FACFECEN100357ARTI eng c1999 American Institute of Physics
Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements
Giudice, G. E. ; Kuksenkov, D. V. ; Temkin, H. ; Lear, Kevin L.
"Work at Texas Tech is supported by BMDO (monitored by Lou Lome), DARPA, and the J. F. Maddox Foundation."
Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 µA, to about 1 ns at a bias close to threshold. For a 6 × 6 µm2 oxide aperture device the threshold carrier density was nth ~ 2 × 1018cm–3. The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D ~ 11 cm2s–1 was obtained.
Colorado State University. Libraries
1999
text ; image
application/pdf
ECEkll00007.pdf
FACFECEN100357ARTI
eng
c1999 American Institute of Physics