Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers Blum, O. ; Hafich, M. J. ; Klem, J. F. ; Lear, Kevin L. ; Chu, S. N. G. "This work was supported by the U.S. Department of Energy under Contract No. DE-C04-76-DP00789." We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 µm with a maximum reflectivity exceeding 99%. We also measure current–voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported. Colorado State University. Libraries 1995 text ; image application/pdf ECEkll00004.pdf FACFECEN100354ARTI eng c1995 American Institute of Physics
Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
Blum, O. ; Hafich, M. J. ; Klem, J. F. ; Lear, Kevin L. ; Chu, S. N. G.
"This work was supported by the U.S. Department of Energy under Contract No. DE-C04-76-DP00789."
We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 µm with a maximum reflectivity exceeding 99%. We also measure current–voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported.
Colorado State University. Libraries
1995
text ; image
application/pdf
ECEkll00004.pdf
FACFECEN100354ARTI
eng
c1995 American Institute of Physics