Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design Schneider, Richard P. ; Crawford, Mary Hagerott ; Choquette, Kent D. ; Lear, Kevin L. ; Kilcoyne, Sean Patrick ; Figiel, J. J. "This work was supported by the U.S. Department of Energy under Contract No. DE-AC04-94AL85000." A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. Colorado State University. Libraries 1995 text ; image application/pdf ECEkll00003.pdf FACFECEN100353ARTI eng c1995 American Institute of Physics
Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design
Schneider, Richard P. ; Crawford, Mary Hagerott ; Choquette, Kent D. ; Lear, Kevin L. ; Kilcoyne, Sean Patrick ; Figiel, J. J.
"This work was supported by the U.S. Department of Energy under Contract No. DE-AC04-94AL85000."
A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability.
Colorado State University. Libraries
1995
text ; image
application/pdf
ECEkll00003.pdf
FACFECEN100353ARTI
eng
c1995 American Institute of Physics