Comprehensive numerical modeling of vertical-cavity surface emitting lasers Hadley, G. Ronald ; Lear, Kevin L. ; Warren, Mial E. ; Choquette, Kent D. ; Scott, J. W. ; Corzine, S. W. (Scott W.) "This work was performed in part at Sandia National Laboratories and supported by the U.S. Department of Energy under Contract DE-AC04-94AL85000." We present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes affecting cw operation of axisymmetric devices. In particular, our model includes a description of the 2-D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation. Colorado State University. Libraries 1996 text ; image application/pdf ECEkll00028.pdf FACFECEN100378ARTI eng c1996 IEEE
Comprehensive numerical modeling of vertical-cavity surface emitting lasers
Hadley, G. Ronald ; Lear, Kevin L. ; Warren, Mial E. ; Choquette, Kent D. ; Scott, J. W. ; Corzine, S. W. (Scott W.)
"This work was performed in part at Sandia National Laboratories and supported by the U.S. Department of Energy under Contract DE-AC04-94AL85000."
We present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes affecting cw operation of axisymmetric devices. In particular, our model includes a description of the 2-D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation.
Colorado State University. Libraries
1996
text ; image
application/pdf
ECEkll00028.pdf
FACFECEN100378ARTI
eng
c1996 IEEE