A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas

A review of microelectronic film deposition using direct and remote electron-beam-generated plasmas

Zu, Zengqi ; Luo, Zongnan ; Sheng, Tien Yu ; Zarnani, Hamid ; Lin, Chongjie ; Collins, George J.

"This work was supported in part by the Naval Research Laboratory, the National Science Foundation, Emerging Technology Division NSF Grant EET8806851, Solid State and Microstructures, NSF Grant ECS-8906311, and the ORC Manufacturing Company, Ltd."

Soft-vacuum-generated electron beams employed to create a large area plasma for assisting chemical vapor deposition (CVD) of thin films are reviewed. The electron beam plasma is used both directly, where electron impact dissociation of feedstock gases plays a dominant role, and indirectly in a downstream afterglow, where electron impact dissociation of feedstock reactants plays no role. Rather, photodissociation and metastable atom-molecule reactions dominate in the downstream afterglow. To better understand electron-beam-created plasmas using a slotted ring cathode, the transmitted beam spatial intensity profiles have been quantified from initial generation at a slotted line-shaped cold cathode through acceleration in the cathode sheath and propagation in the ambient gas. To better understand the role of photodissociation in downstream plasma-assisted CVD, the VUV output spectrum and VUV generation efficiency from electron-beam-excited plasmas have been measured. The properties of films deposited via both direct electron-beam-generated plasma-assisted CVD and downstream afterglow CVD are reviewed and compared to conventional plasma assisted CVD films.

Colorado State University. Libraries

1990

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application/pdf

ECEgjc00004.pdf

FACFECEN100143ARTI

eng

English

c1990, IEEE